Tailoring Magnetic Domains and Magnetization Switching in CoFe Nanolayer Patterns with Their Thickness and Aspect Ratio on GaAs (001) Substrate

The thickness and aspect ratio dependence of magnetic domain formation in CoFe nanolayer patterns on GaAs (001) substrates are investigated by means of a direct approach using magnetic force microscopy at room temperature. Magnetic force microscope observations under as‐deposition condition show that magnetic domain formation in the patterns depends strongly on the aspect ratio and thickness of the patterns and the crystallographic orientations of the substrates. A single magnetic domain is more easily formed in the patterns with a higher aspect ratio, with a thinner nanolayer thickness, and along the ⟨110⟩ direction of the substrates. The magnetic fields are next applied in the direction parallel to the ⟨1–10⟩ and ⟨110⟩ orientations of the substrates to characterize a magnetization switching behavior in the patterns. The aspect ratio and thickness of the patterns and the crystallographic orientations of the substrates strongly affect the magnetic fields needed for magnetization switching in the patterns. A higher magnetic field is required for a higher aspect ratio and a thinner nanolayer thickness of the patterns. All the direct observations confirm that the magnetic domain structures and magnetization switching are tuned by controlling aspect ratio and thickness of the patterns and the crystallographic orientations of the substrates.