Progress of Electromigration in IC Interconnect Metallic Line

With the development of large-scale integrated circuits, the reliability caused byelectromigration becomes a key issue. The fundamental of electromigration is introduced. The recentprogress in research on electromigration is overviewed. The results show that the size, shape andmicrostructure of interconnect metallic line play an important role in the process of electromigration.Also the temperature, current density, stress gradient and alloy elements have strongly effects onMTF (mean time to failure) of electromigration. Finally, the imminent issues of electromigration havebeen presented.