热电效应
碲
材料科学
热电材料
光电子学
半导体
热导率
热电冷却
塞贝克系数
热电发电机
功勋
兴奋剂
带隙
纳米技术
冶金
复合材料
物理
热力学
作者
Gang Qiu,Shouyuan Huang,Mauricio Segovia,Prabhu K. Venuthurumilli,Yixiu Wang,Wenzhuo Wu,Xianfan Xu,Peide D. Ye
出处
期刊:Nano Letters
[American Chemical Society]
日期:2019-02-12
卷期号:19 (3): 1955-1962
被引量:84
标识
DOI:10.1021/acs.nanolett.8b05144
摘要
Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an outstanding thermoelectric material with high value of thermoelectric figure-of-merit ZT. In view of the recent progress in developing synthesis route of two-dimensional (2D) tellurium thin films as well as the growing trend of exploiting nanostructures as thermoelectric devices, here for the first time we report excellent thermoelectric performance of tellurium nanofilms, with room temperature power factor of 31.7 {\mu}Wcm-1K-2 and ZT value of 0.63. To further enhance the efficiency of harvesting thermoelectric power in nanofilm devices, thermoelectrical current mapping was performed with a laser as a heating source, and we found high work function metals such as palladium can form rare accumulation-type metal-to-semiconductor contacts to 2D Te, which allows thermoelectrically generated carriers to be collected more efficiently. High-performance thermoelectric 2D Te devices have broad applications as energy harvesting devices or nanoscale Peltier coolers in microsystems.
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