Investigation of Thermoelectric Power of Ga2Se3 Monocrystals

Abstract Single crystals of Ga 2 Se 3 were prepared by a technique based on the Bridgman method. Thermoelectric power was investigated in the temperature range 160–525 K. From this investigation many physical parameters such as effective masses of charge carriers, carrier mobilities, diffusion length, diffusion coefficient, and the relaxation time for both majority and minority carriers were estimated. In conjunction with the electrical conductivity and the charge carrier concentration, the thermoelectric power is discussed.