锭
薄脆饼
退火(玻璃)
硅
载流子寿命
单晶硅
材料科学
氧气
直拉法
冶金
化学
矿物学
光电子学
有机化学
合金
作者
Guilherme Gaspar,Mari Juel,Rune Søndenå,Soraia Páscoa,Marisa Di Sabatino,L. Arnberg,Eivind Øvrelid
标识
DOI:10.1016/j.jcrysgro.2015.02.032
摘要
Industrial scale n-type monocrystalline silicon ingots with different crown shape and shouldering area have been grown and characterized in terms of minority carrier lifetime, resistivity and concentration and distribution of interstitial oxygen (Oi), voids and thermal donors (TD). The properties have been correlated with the process parameters. The results indicate that there is a relationship between the top ingot shape and the corresponding minority carrier lifetime quality of the first part of the ingot body. Oxygen incorporation is directly correlated to the time that the melt free surface is in contact with the purged gas atmosphere as well as the temperature of the melt. The relative P-band position is dependent on the process parameters at the early part of the ingot and the corresponding oxide particles could be included on the first wafers obtained from the ingot. The results also show that the early body quality is not always improved after TD annealing. This suggests that not all types and sizes of TD are dissolved during standard annealing processes. Other types of oxygen-related defects are most likely present and contribute to the lowered minority carrier lifetime found at this region. Both higher oxygen and vacancy concentration contribute to the formation of these defects.
科研通智能强力驱动
Strongly Powered by AbleSci AI