Digital in-line holographic microscopy at 1310 nm with superluminescent light-emitting diode broadband source

Infrared digital in-line microscopic holography is achieved using a superlumiescent light emitting diode broadband source at 1310nm. It can be applied for the inspection of bulk material defects as well as some surface defects in silicon wafer. The imaging of a calibrated positive USAF target is used for the demonstration of the resolution improvement. Two pieces of semiconductor silicon wafer each with a slot 10μm in width are placed perpendicular with a 4mm gap to demonstrate the 3D imaging from a single hologram.