薄膜晶体管
标准电池
可用性
补偿(心理学)
计算机科学
数码产品
电子线路
电子工程
计算机硬件
电气工程
集成电路
工程类
材料科学
纳米技术
人机交互
心理学
图层(电子)
精神分析
作者
Ce Ma,Qing Zhang,Yuxin Ji,Lining Hu,Yaxin Liu,Kaiquan Chen,Jian Zhao,Yongfu Li
标识
DOI:10.1109/ojcas.2021.3123396
摘要
With the increasing demand for transparent/flexible displays, healthcare sensors, and robotics, there is a need to advance the development of thin-film transistors (TFTs) manufacturing and large-scale circuits. This paper has proposed an IGZO-TFT-PDK to aid the educators and research community to explore the circuit design space of dual-gate IGZO-TFT devices. To solve the tensile force-induced current variation problem in IGZO-TFT devices, an omni-directional device and its layout template with a compensation methodology that mitigates its variation are proposed. A layout template is also proposed to speed up the design development flow of both analog and digital IGZO-TFT circuits. Based on the proposed layout template, a tensile force-insensitive standard cell library is proposed. We have implemented a 32-bit carry select adder to validate the usability of the standard cell library.
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