Advanced hybrid process with back contact IGZO‐TFT

Abstract We propose a new structure hybrid backplane technology with back contact IGZO‐TFT and LTPS. In this structure, IGZO is directly connected with intermediate metal to reduce the number of layers. The patterning process of IGZO and intermediate metal was optimized to realize superior IGZO/metal contact structure. The uniformity of contact resistance over a large area has been address for hybrid backplane. The characteristics of IGZO‐TFTs with high uniformity and reliability were confirmed. High‐quality AMOLED panels with new structure backplane have been adopted at smartphone with 6.6 in. display after severe reliability tests. We believe that the proposed structure would be useful for the mass‐production of OLED display with high quality and low cost.