High-temperature CW operation of planar buried-ridge structure lasers at λ = 1.5μm

GaInAsP/InP-PBRS lasers emitting at l.5μm have been fabricated by multiple liquid-phase epitaxy. Effective current confinement is achieved without current blocking layers. CW threshold current is as low as 9 mA at 25°C. Output powers per facet of up to 10mW at 80°C and 3.5 mW at 100°C are obtained. The maximum operation temperature of 110°C is the highest value yet achieved with this type of laser at 1.5μm.