Modeling of a pair of annular through silicon vias (TSV)

Modelling of a pair of annular TSVs is performed in this paper. A set of equivalent lumped-element circuit models for two annular TSV interconnects is proposed, with MOS capacitance effects treated appropriately. The method for characterizing its frequency- and temperature-dependent RLCG parameters is proposed, including its effective capacitance and conductance. The characteristic impedance and insertion loss are studied numerically.