[Objective] This study aimed to explore the mutagenesis effects of N+ ion beam implantation on Streptomyces albus and obtain high-yield salinomycin-producing mutant strain. [Method] Streptomyces albus strain S-11-04 was mutated with different doses of N+ implantation. The effects of low energy N+ implantation on the survival rate, colony morphology and salinomycin-producing ability were investigated. [Result] The results showed that low energy N+ implantation can efficiently improve the positive mutation rate of Streptomyces albus; 13 mutant strains with high yield of salinomycin were isolated; to be specific, mutant strain N3-6 has relatively good genetic stability with four continuous generations, and the titres of salinomycin were increased by 41% in the shake-flask culture and 20.5% in mass production compared with the control. [Conclusion] N+ ion beam irradiation is an effective method to obtain high-yield salinomycin-producing Streptomyces albus strain.