Performance-related structural, optical, and electrical characteristics of 2 μm the CdTe-CdSe absorption layer of solar cell

The current work attempts to develop the most efficient compositions of 1 m between CdTe1-xSex thin films as absorptive layer in solar cell applications (with x = 0 to 1, step 0.1 wt.%). Mechanical alloying was used to create the CdTe1-xSex powdered materials, and thermal evaporation was used to create the thin film versions of these compositions. Swanepoel's approach was used to measure the films' thicknesses, and the spectroscopic ellipsometry technique was used to calibrate the results. The analyzed films' structural, electrical, and optical characteristics have been studied. It was determined that CdTe0.7Se0.3 at had the highest crystalize size and the lowest lattice strain, which contributed to the reduction in imperfection in this sample since XRD revealed the nanostructures nature of these films. Additionally, it was discovered that CdTe0.7Se0.3 had the lowest energy gap and the highest refractive index, which was responsible for this composition's largest crystalline size. CdTe0.7Se0.3 possessed low resistivity, high conductivity, a high carrier concentration, and high carrier mobility, according to the Hall effect studies of these films. Two different types of solar cells were created: n-CdS/pCdTe and n-CdS/p-CdTe/ CdTe0.7Se0.3. The power conversion efficiency of these two solar cells was determined to be 17.71 for CdS/CdTe and 18.92 for CdS/CdTe/ CdTe0.7Se0.3. Se should be doped in CdTe1-xSex thin films at an ideal level of 0.3%, making CdTe0.7Se0.3 thin film a suitable choice for solar cell applications.