Polarization sensitive photodetector based on quasi-1D ZrSe3

Abstract The in-plane anisotropy of transition metal trichalcogenides (MX 3 ) has a significant impact on the molding of materials and MX 3 is a perfect choice for polarized photodetectors. In this study, the crystal structure, optical and optoelectronic anisotropy of one kind of quasi-one-dimensional (1D) semiconductors, ZrSe 3 , are systematically investigated through experiments and theoretical studies. The ZrSe 3 -based photodetector shows impressive wide spectral response from ultraviolet (UV) to near infrared (NIR) and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W -1 and detectivity of ~10 6 at 532 nm. Moreover, the dichroic ratio of ZrSe 3 -based polarized photodetector is around 1.1 at 808 nm. This study suggests that ZrSe 3 has potential in optoelectronic applications and polarization detectors.