铒
五氧化二钽
材料科学
净收益
波导管
光电子学
放大器
光放大器
光子学
光抽运
兴奋剂
光学
激光器
CMOS芯片
物理
电介质
作者
Harsh Vaid,Sharashti Saxena,Jagriti Ahuja,Amol Choudhary
标识
DOI:10.1088/2631-8695/adf59c
摘要
Abstract Erbium-doped tantalum pentoxide (Er:Ta 2 O 5 ) is an excellent material platform for achieving efficient optical amplification in photonic integrated circuits (PICs). In this paper, we present a multi-stage distributed pumping approach for efficiently pumping erbium ions to develop a fully integrated high-gain on-chip Er:Ta 2 O 5 waveguide amplifier. The spiral Er:Ta 2 O 5 waveguides are designed to support single-mode operation at 1550 nm and are optimized for low losses. The undoped Ta 2 O 5 waveguides for pump delivery are designed to maximize pump light coupling into the gain waveguides, ensuring efficient erbium ion excitation and achieving high optical gain. When compared with a single-stage optically pumped Er:Ta 2 O 5 waveguide amplifier, gain improvements of over 3.5 dB are observed for similar doping concentrations of Er 3+ ions and waveguide length.
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