钙钛矿(结构)
卤化物
二极管
光电子学
材料科学
Crystal(编程语言)
发光二极管
量子效率
重组
齿合度
对偶(语法数字)
接口(物质)
纳米技术
电荷(物理)
量子点
科技与社会
晶体结构
载流子
化学
串联
自发辐射
晶体工程
分子
结晶学
化学物理
量子
双重角色
作者
Xiaojuan Cao,Xuan Wang,Guoyi Chen,Huimin Yang,Yongkang Tang,Zhiqiu Yu,Shengjie Du,Ao Zhou,Shuxin Wang,Jian Xiao,Chaomin Dong,Haibing Wang,Xuzhi Hu,Chen Wang,Tao Chen,Songzhan Li,Weijun Ke,Hongwei Lei,Guojia Fang,Fang Yao
标识
DOI:10.1002/anie.202521031
摘要
Perovskite light-emitting diodes (PeLEDs) have emerged as a promising technology for future displays owing to their prominent optoelectronic properties. However, inefficient charge injection and nonradiative recombination at the interfaces, alongside defective crystal growth, remain the primary bottlenecks for efficient LED devices. Herein, we propose a "molecular suturing" strategy that synchronously stabilizes the interface and directs crystal growth using a multifunctional ligand. We employ methyl bis(2,2,2-trifluoroethyl) phosphonoacetate (MBTPA), which features cooperative carbonyl (C = O), phosphoryl (P = O), and trifluoromethyl (─CF3) groups. The C = O and P = O groups chemically bind to defect sites, forming coordination interactions with undercoordinated Pb2+ and halide vacancies. Concurrently, the ─CF3 moieties establish robust hydrogen-bond interactions with hole injection layer. By providing these two complementary interactions on opposite sides, MBTPA effectively "sutures" the buried interface between the perovskite and the hole-transport layer, strengthening interfacial adhesion and promoting more efficient hole injection. Consequently, MBTPA-modified PeLEDs achieve bright blue emission at 485 nm with a peak external quantum efficiency (EQE) of 23.14%, and green emission at 513 nm with a peak EQE of 27.05%. This molecular suturing strategy provides an effective route for simultaneous control of interfacial chemistry and crystallization, offering a generalizable approach for performance enhancement in perovskite optoelectronic devices.
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