电容
电容器
电介质
物理
分析化学(期刊)
电气工程
材料科学
光电子学
电压
化学
量子力学
电极
有机化学
工程类
作者
Lun Lun Chen,Yung‐Hsien Wu,Yubo Lin,Chia-Chun Lin,Min-Lin Wu
标识
DOI:10.1109/led.2012.2209396
摘要
Metal-insulator-metal (MIM) capacitors with ZrLaO x /ZrTiO x /ZrLaO x laminate as the insulator were explored in this work. Single ZrTiOx dielectric was found to have a negative quadratic voltage coefficient of capacitance (VCC-α) with a high κ value of 22.5. By integrating this dielectric with ZrLaOx which provides a positive VCC-α and a high κ value of 25.8, the “canceling effect” of VCC-α can be achieved while a high capacitance density can be maintained. MIM capacitors with the laminated structure display desirable characteristics in terms of a capacitance density of 14.6 fF/μm 2 , a low VCC-α of 33 ppm/V 2 , negligible frequency dispersion, and satisfactory leakage current of 1.6 × 10 -6 A/cm 2 at -1.5 V. These results also well meet the International Technology Roadmap for Semiconductors requirement set for 2020.
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