分子束外延
光致发光
材料科学
光电子学
红外线的
欧姆接触
透射电子显微镜
衍射
硅
宽禁带半导体
外延
光学
纳米技术
图层(电子)
物理
作者
Pavel Aseev,Paul E. D. Soto Rodriguez,Valentín Bote Gómez,Naveed ul Hassan Alvi,José Manuel,F. M. Morales,J. Jiménez,R. Garcı́a,Alexander Senichev,Christoph Lienau,E. Calleja,R. Nötzel
摘要
The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology.
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