掺杂剂
材料科学
气相
带隙
宽禁带半导体
光电子学
Crystal(编程语言)
相(物质)
兴奋剂
分析化学(期刊)
化学
有机化学
程序设计语言
计算机科学
物理
热力学
色谱法
作者
H. Paul Maruska,J. J. Tietjen
摘要
Single-crystalline, colorless, GaN has been prepared by a vapor-phase growth technique previously used to prepare GaAs, GaP, and GaSb. These crystals are the first reported speciments of GaN suitable for good electrical and optical evaluation of this compound. It has been determined that GaN has a direct energy bandgap of 3.39 eV, and that undoped crystals prepared by this method have a very high inherent electron concentration, typically above 1019/cm3, which is probably related to a high density of nitrogen vacancies. Conducting p-type specimens have been prepared using Ge as the dopant; but this result has been difficult to reproduce, and the samples have been electrically inhomogeneous.
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