Valleytronics公司
异质结
材料科学
极化(电化学)
光电子学
纳米技术
物理
凝聚态物理
化学
铁磁性
物理化学
自旋电子学
作者
Jonghwan Kim,Chenhao Jin,Bin Chen,Hui Cai,Tao Zhao,Puiyee Lee,Salman Kahn,Kenji Watanabe,Takashi Taniguchi,Sefaattin Tongay,Michael F. Crommie,Feng Wang
出处
期刊:Science Advances
[American Association for the Advancement of Science]
日期:2017-07-07
卷期号:3 (7): e1700518-e1700518
被引量:299
标识
DOI:10.1126/sciadv.1700518
摘要
layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.
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