High-Performance β-Ga 2 O 3 SBD and SiC MOSFET for High-Efficiency DC-DC Converter

High-performance vertical $\beta$ - Ga2O3SBD with a Schottky contact area of $1 \times 1 \mathrm{~mm}^{2}$ is demonstrated and a high-efficiency DC-DC converter is obtained based on the device. After organic and acid cleaning, the unreliable upper surface of the epitaxial layer is removed by ICP180, then the breakdown voltage is enhanced of the devices. The $\beta-\mathrm{Ga}_{2} \mathrm{O}_{3}$ SBD can obtain a forward current of 6 A with a forward voltage of 4 V, and has a reverse breakdown voltage of 610 V. The forward turn-on voltage ($V_{\mathrm{F}}$) and the on-resistance ($R_{\mathrm{on}}$) are 1.2 V and $0.47 \Omega$, respectively. The conversion efficiency of the $\beta-\mathrm{Ga}_{2} \mathrm{O}_{3}$ SBD-based DC-DC converter is 96%. This work indicates the great potential of $\beta$ - Ga2O3SBDs and relevant circuits in power electronic applications.