摘要
Quantum dots (QDs) are nanoscale semiconductor particles that exhibit unique optical and electronic properties due to quantum confinement effects. Their tunable band gap, narrow emission spectrum, high photoluminescence quantum yield, and excellent color purity make them promising materials for modern optoelectronic devices. Recent advances in colloidal synthesis, surface passivation, and heterostructure engineering have enabled precise control over their size, composition, and morphology. As a result, QDs are widely used in applications such as quantum dot light-emitting diodes (QLEDs), solar cells, photodetectors, lasers, bio-imaging, and quantum information technologies. This paper presents a review and analytical study of quantum dot applications in optoelectronics, focusing on quantum confinement theory, exciton dynamics, material engineering, and device fabrication techniques. It also compares different types of quantum dots, including cadmium-based, InP, perovskite, and graphene QDs, while discussing their efficiency, stability, and environmental concerns. Performance metrics such as external quantum efficiency (EQE) and power conversion efficiency (PCE) are analyzed. The study concludes that quantum dots offer significant potential for high-performance, flexible optoelectronic devices, although challenges related to long-term stability, large-scale manufacturing, and sustainability remain.