Experimental Demonstration of HfO2-based Ferroelectric FET with MoS2 Channel for High-Density and Low-Power Memory Application

In this study, we have experimentally demonstrated memory operation of a HfO 2 -based ferroelectric FET (FeFET) with MoS 2 channel and ZrO2 seed layer into HfZrO 2 gate insulator. Ultrathin MoS 2 channel FeFET showed the memory window of about 0.22V, the retention time was above 5000 seconds, and the endurance cycles were above 106 times, which indicates the applicability of the device for high-density memory such as 3D FeFET.