Design and synthesis of chromophores with enhanced electro-optic activities in both bulk and plasmonic–organic hybrid devices

发色团 极化 材料科学 超极化率 光电子学 光化学 化学 有机化学 分子 铁电性 电介质 极化率
作者
Huajun Xu,Delwin L. Elder,Lewis E. Johnson,Wolfgang Heni,Yovan de Coene,Eva De Leo,Marcel Destraz,Norbert Meier,Wouter Vander Ghinst,Scott R. Hammond,Koen Clays,J. Leuthold,Larry R. Dalton,Bruce H. Robinson
出处
期刊:Materials horizons [Royal Society of Chemistry]
卷期号:9 (1): 261-270 被引量:48
标识
DOI:10.1039/d1mh01206a
摘要

This study demonstrates enhancement of in-device electro-optic activity via a series of theory-inspired organic electro-optic (OEO) chromophores based on strong (diarylamino)phenyl electron donating moieties. These chromophores are tuned to minimize trade-offs between molecular hyperpolarizability and optical loss. Hyper-Rayleigh scattering (HRS) measurements demonstrate that these chromophores, herein described as BAH, show >2-fold improvement in β versus standard chromophores such as JRD1, and approach that of the recent BTP and BAY chromophore families. Electric field poled bulk devices of neat and binary BAH chromophores exhibited significantly enhanced EO coefficients (r33) and poling efficiencies (r33/Ep) compared with state-of-the-art chromophores such as JRD1. The neat BAH13 devices with charge blocking layers produced very large poling efficiencies of 11.6 ± 0.7 nm2 V-2 and maximum r33 value of 1100 ± 100 pm V-1 at 1310 nm on hafnium dioxide (HfO2). These results were comparable to that of our recently reported BAY1 but with much lower loss (extinction coefficient, k), and greatly exceeding that of other previously reported OEO compounds. 3 : 1 BAH-FD : BAH13 blends showed a poling efficiency of 6.7 ± 0.3 nm2 V-2 and an even greater reduction in k. 1 : 1 BAH-BB : BAH13 showed a higher poling efficiency of 8.4 ± 0.3 nm2 V-2, which is approximately a 2.5-fold enhancement in poling efficiency vs. JRD1. Neat BAH13 was evaluated in plasmonic-organic hybrid (POH) Mach-Zehnder modulators with a phase shifter length of 10 μm and slot widths of 80 and 105 nm. In-device BAH13 achieved a maximum r33 of 208 pm V-1 at 1550 nm, which is ∼1.7 times higher than JRD1 under equivalent conditions.

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