Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors

Abstract In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III‐nitride semiconductors. In terms of photonics applications in the visible–UV spectral range, III‐nitrides are one of the most promising materials. For instance, emerging gallium nitride (GaN)‐based micro‐light‐emitting diode (LED) technology for high‐resolution display, and UV photo‐detection for environmental monitoring, health, and medical applications. In this work, hybrid micro/nano‐LEDs with integration of II–VI quantum dots by means of lithography and nano‐imprinting patterning techniques are demonstrated, and high‐performance red/green/blue and white emissions are achieved. Consequently, plasmonic nanolasers are designed and fabricated using a metal‐oxide‐semiconductor structure, where strong surface plasmon polariton coupling leads to the efficient lasing with a low excitation threshold from the visible to UV tunable spectral range. Furthermore, performance‐improved AlGaN UV solar‐blind avalanche photodiodes (APDs) with a separate absorption and multiplication structure by polarization engineering are reported. These APDs deliver a record‐high avalanche gain of up to 1.6 × 10 5 . These newest advances in nano/micro‐LEDs, nanolasers, and APDs can shed light on the emerging capabilities of III‐nitride in cutting‐edge applications.