A Poisson–Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors

Abstract We propose the modeling of electron transport in GaN-based high electron mobility transistors (HEMTs) by combining the Poisson–Schrodinger method and the cellular automaton method. In HEMT, it is necessary to consider the influence of two-dimensional electron gas, band nonparabolicity, and upper valley on drift velocity. A wide range of electron transport modeling environments from low to high electric fields is required. By using the cellular automaton method instead of the traditional Monte Carlo carrier transport modeling method, noise-free drift velocity analysis is realized even at low electric fields. This makes it possible to stably investigate the effects of the HEMT structure and the influence of various scattering mechanisms on the drift velocity.