异质结
激子
半导体
超快激光光谱学
载流子
放松(心理学)
材料科学
电荷(物理)
图层(电子)
带隙
凝聚态物理
光电子学
光谱学
纳米技术
物理
量子力学
社会心理学
心理学
作者
Ang Bian,Shuangyan Liu,Xiaoxian Zhang,Zeng Liu,Dawei He,Hui Zhao,Jun Dai
标识
DOI:10.1088/1361-6463/acba2b
摘要
Abstract The layer thickness determines the electronic structure of two-dimensional (2D) materials, leading to different band alignments, which are crucial for the transition metal dichalcogenides heterostructures. Here, we investigated the heterostructure of WSe 2 /WS 2 with different layer thicknesses by steady-state and transient absorption spectroscopy. We observed different ultrafast charge transfer behaviors in 1L-WSe 2 /2L-WS 2 and 2L-WSe 2 /2L-WS 2 few-layer heterostructures. We demonstrate that the layer thickness determines the sequence of intralayer exciton relaxation and interlayer charge transfer. The valley transfer of the band edge induced by the layer thickness can effectively mediate the hot carrier transfer time and interlayer exciton lifetime. These provide us a deeper understanding of carrier dynamics in 2D indirect bandgap semiconductor heterostructures.
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