Controlled Crystallinity of a Sn-Doped α-Ga2O3 Epilayer Using Rapidly Annealed Double Buffer Layers

Double buffer layers composed of (Al_xGa_1-x)₂O₃/Ga₂O₃ structures were employed to grow a Sn-doped α-Ga₂O₃ epitaxial thin film on a sapphire substrate using mist chemical vapor deposition. The insertion of double buffer layers improved the crystal quality of the upper-grown Sn-doped α-Ga₂O₃ thin films by blocking dislocation generated by the substrates. Rapid thermal annealing was conducted for the double buffer layers at phase transition temperatures of 700-800 °C. The slight mixing of κ and β phases further improved the crystallinity of the grown Sn-Ga₂O₃ thin film through local lateral overgrowth. The electron mobility of the Sn-Ga₂O₃ thin films was also significantly improved due to the smoothened interface and the diffusion of Al. Therefore, rapid thermal annealing with the double buffer layer proved advantageous in achieving strong electrical properties for Ga₂O₃ semiconductor devices within a shorter processing time.