Effect of oxygen-ion implantation on the local electronic structures of strontium-titanate single crystals: An investigation using synchrotron-based x-ray diffraction and x-ray photoemission techniques

The present study focuses on the oxygen (O)-ion implantation-induced structural and electronic modifications in the single crystals of strontium-titanate (s-STO) using synchrotron-based x-ray diffraction (XRD), x-ray photoemission spectroscopy (XPS), and resonant x-ray photoemission spectroscopy. The crystallinity of the epitaxially aligned phases of s-STO is confirmed through XRD. This direct evidence of heavy ion implantation is supported by the Monte Carlo-based simulation of stopping and range of ions in matter/transport of ions in matter. XPS at different core levels is performed to detect the exact oxidation state of Ti ions in s-STO. The dominance of Ti3+ over Ti4+ upon oxygen implantation suggests the disorder in the perovskite material, primarily in the form of oxygen vacancies (VO). The confirmation of VO is explicitly shown by the enhancement in the spectral area of the assigned peak in the O 1s XPS. Resonant photoemission spectroscopy measurements were performed by varying photon energy from 32 to 46 eV to understand the nature of the valence band electronic structure of s-STO. The resonance in the different hybridized states of s-STO is confirmed by the spectral features of constant initial state plots. There is a correlation between the defective state of Ti and the oxygen-deficient state. The transformation from SrTiO3 to SrTiO2.5, partially or completely, is essentially required to underline any modification in the electronic properties of s-STO. s-STO is in a mixed state of an ionic conductor and an electronic conductor. This study outlines the creation of VO due to O-ion implantation and investigates the changes in the electronic structures of s-STO.