Studies of carrier transport mechanism in NiO/Ag/NiO transparent conducting electrode/ZnO metal-semiconductor-metal photodetectors

Oxide/metal/oxide multilayers as a transparent conducting electrode (TCE) have been developed to replace metals due to their high transparency and low sheet resistance. Nickel oxide (NiO) film with a high work function was used as an oxide to form NiO/Ag/NiO (NAN) TCE, therefore a high barrier height between NAN/zinc oxide (ZnO) interface. In the study, NAN TCE was deposited on ZnO surface to fabricate metal-semiconductor-metal (MSM) photodetectors (PDs) and study its carrier transport mechanism. The NAN TCE has a low sheet resistance of 6.5 Ω/sq. and transmittance more than 40% in a 300-1000 nm wavelength range. Such issues result in the figure-of-merit is higher (2.3 × 10^-4Ω^-1) than that (2.5 × 10^-7Ω^-1) of pure single NiO thin film. As compared to the conventional Au/ZnO MSM-PDs, the NAN/ZnO MSM-PDs demonstrates a lower leakage current as a result of Ni atoms diffusing into ZnO and passivating the defects. Due to the high work function of NiO, the NAN/ZnO interface exhibits a barrier height as high as 0.91 eV. The Au/ZnO MSM-PDs reveals only one carrier conduction of ohmic due to the electrons tunnel form Au into ZnO through the surface defects. In contrast, two distinct carrier transport mechanisms were observed in the NAN/ZnO MSM-PDs. At low-voltage forV⩽0.64 V, ohmic conduction dominates and the electrons inject from NAN to ZnO, trapped by the defect states of ZnO. At high-voltage for V⩾0.64 V, the trapped electrons acquire enough energy and emit from trap to conduction band, entering Poole-Frankel emission transport.