P‐14.23: Design of oxide TFT adaptive device based on OLED

The oxide TFT backplane technology for large‐generation OLEDs, due to its high utilization rate and excellent off‐state performance, has become a fiercely competitive field. Nevertheless, the development of technologies aimed at high resolution and narrow borders presents a stringent challenge. In this study, we propose a method to regulate the negative shift of threshold voltage (Vth) caused by the reduction of device channel length using the bottom gate, which is aimed at future high‐resolution, narrow‐border OLED oxide backplane technology. For self‐aligned top‐gate TFT devices, by adding a bottom gate and applying different voltages to it, we effectively improved the situation of threshold voltage drift caused by device size effects. We have successfully fabricated this adaptive IGZO thin‐film transistor (TFT), and by applying different voltages to the device's bottom gate, we can regulate the threshold voltage. We can compress the channel length of the device to 3 microns or even smaller sizes, which is of great help for the high‐resolution and narrow‐borderization of our OLED displays.