Robust and Enhanced Short-Wave Near-Infrared Light Emission in Phosphorene through Photon-Activated Oxidation

Efficient, broadband, and portable short-wave near-infrared (SW-NIR) light sources are desirable for applications in compact optical systems. Two-dimensional materials, with strong light–matter interactions and high compatibility with various platforms, are promising candidates. Here, we demonstrate a robust and broadband light emission in phosphorene, covering the entire SW-NIR band (750–1100 nm), through oxygen defect engineering. The light emission intensities can be further enhanced utilizing a controlled in situ photoactivated oxidation effect, which are over 25× higher than those in pristine bilayer phosphorene, 3.5× higher than those in monolayer WSe2, and only 11.5% lower than those in monolayer WS2. Our work demonstrates that phosphorene is a promising platform for investigating SW-NIR light-emitting devices and applications.