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300 积分 2025-07-18 加入
6.5 kV-Class 4H-SiC Deep Epi-Refilled Super-junction Schottky Diode with Record Performance over 7.2 GW/cm 2
22天前
已完结
Polytype evaluation in 3C-SiC/4H-SiC stacked epilayers on trenched 4H-SiC substrates using Raman spectroscopy
22天前
已完结
Surface investigation of the morphological evolution and formation mechanism of nanoscale growth pits in 4H-SiC homoepitaxy
25天前
已完结
Optimization and Simulation on Gas Flow and Temperature Fields on the Homoepitaxial Growth of N-Doped 4H-SiC Wafers
25天前
已完结
In situ non-destructive tracking of complex defect evolution on 4H-SiC homoepitaxial surfaces: Formation mechanisms and dynamic behavior of morphological defects
25天前
已完结
Correlation of recombination dynamics with structural defects in 4H–SiC epitaxial wafers revealed by TRPL
25天前
已关闭
Polytype evaluation in 3C-SiC/4H-SiC stacked epilayers on trenched 4H-SiC substrates using Raman spectroscopy
25天前
已完结
Mechanism of Nitrogen Doping Concentration Drift in 4H-SiC Epitaxial Layers Induced by Ring Coating Thickness
25天前
已完结
Mechanism for the influence of surface micro-defects on step-flow growth in 4H-SiC epitaxy: A thermodynamic Monte Carlo investigation
25天前
已完结
Heteroepitaxial 3C-SiC for MEMS Applications
25天前
已完结
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