Lv3
356 积分 2024-10-18 加入
Investigation into Inhibitory Effect of C Incorporation on Diffusion of B in SiGe
20小时前
已完结
Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
20小时前
已完结
Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices
20小时前
已完结
Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering
20小时前
已完结
Continuum modeling of implantation and thermal processes for advanced devices formation
2个月前
已完结
Parasitic Capacitance Modeling of Si-Bulk FinFET-Based pMOS
2个月前
已完结
Transistor Optimization with Novel Cavity for Advanced FinFET Technology
2个月前
已完结
Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application
2个月前
已完结
Source/drain eSiGe engineering for FinFET technology
2个月前
已完结
Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
2个月前
已完结
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