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364 积分 2024-06-13 加入
Development of hafnium based high-k materials—A review
1小时前
待确认
Interface optimization and modification of band offsets of ALD-derived Al2O3/HfO2/Al2O3/Ge gate stacks by annealing temperature
2个月前
已完结
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
2个月前
已完结
Hybrid reactant-enabled atomic layer deposition of HfO2 for enhancing metal-insulator-metal capacitor fabricated on TiN electrode
3个月前
已完结
MIM Capacitors Featuring Low EOT and Low Leakage Current Density by Nitrogen-Incorporated HfO$_{\text{2}}$/ZrO$_{\text{2}}$/HfO$_{\text{2}}$
3个月前
已完结
Extraction of trap densities in Al:HfO2 MIM capacitors using voltage ramp stress measurements
3个月前
已完结
Characterization and Reliability Study of an Al-Doped HfO$_\text{2}$-Based High-Density 2.5-D MIMCAP
3个月前
已完结
Enhancement of both dielectric and ferroelectric performances in TiN/Al2O3/Hf1-Zr O2/TiO2/TiN -based 3D capacitors
4个月前
已关闭
Enhancement of both dielectric and ferroelectric performances in TiN/Al2O3/Hf1-Zr O2/TiO2/TiN -based 3D capacitors
4个月前
已关闭
Ultra-high remnant polarization in wake-up-free ferroelectric thin films realized by atomic layer annealing
5个月前
已完结
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