Lv11
70 积分 2025-04-09 加入
The role of AlN thickness in MOCVD growth of N-polar GaN
20分钟前
已完结
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
27分钟前
已完结
N-polar GaN: Epitaxy, properties, and device applications
28分钟前
已完结
Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion
1个月前
已完结
Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor
1个月前
已完结
N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality
1个月前
已完结
Lattice Polarity Manipulation of AlN Films on SiC Substrates for N-Polar GaN HEMTs
1个月前
已关闭
Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
1个月前
已完结
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