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240 积分 2024-06-02 加入
A Unified Analytical One-Dimensional Surface Potential Model for Partially Depleted (PD) and Fully Depleted (FD) SOI MOSFETs
12天前
已关闭
The Impact of X-Ray and Proton Irradiation on ${\rm HfO}_2/{\rm Hf}$-Based Bipolar Resistive Memories
2个月前
已完结
Radiation resilience of Silicon-On-Insulator Vertical Super Thin Body (SOI VSTB) field-effect transistors: A TCAD simulation study on SEE effects
3个月前
已完结
In Situ Single-Event Effects Detection in 22-nm FDSOI Flip-Flops
3个月前
已完结
Single-Event Transient Space Characterizations in 28-nm UTBB SOI Technologies and Below
3个月前
已完结
Total Ionizing Dose Effects in Si-Based Tunnel FETs
3个月前
已完结
Radiation effects in silicon-on-insulator transistors with back-gate control method fabricated with OKI Semiconductor 0.20 μm FD-SOI technology
5个月前
已完结
Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation
5个月前
已完结
Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors
5个月前
已完结
Investigation of radiation hardness improvement by applying back-gate bias for FD-SOI MOSFETs
5个月前
已完结
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