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Improved Interface Quality and Stability of AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using N2-Annealed Atomic-Layer-Deposited SiNx Gate Dielectrics
20天前
已关闭
Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs
1个月前
已完结
Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance
1个月前
已完结
Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures
1个月前
已完结
The impact of defect evolution on the electrical performance of AlGaN/GaN HEMT after 14-MeV neutron irradiation
2个月前
已完结
Electric field-modulated AlGaN/GaN Schottky barrier diode with high breakdown voltage via polarized charge around thin GaN channel
2个月前
已完结
Revisiting the epitaxial Si3N4 crystalline cap on AlGaN/GaN via evolutionary structure search
2个月前
已完结
Effect of hydrogen on electrical properties and defects of AlGaN/GaN HEMTs
2个月前
已完结
Enhanced performance of normally-off AlGaN/GaN MOS-HEMTs taking advantage of extreme-k BaTiO3 with prominent dielectric polarization
2个月前
已完结
Pulsed N2 plasma surface treatment for AlGaN/GaN HEMTs prior to PECVD SiNx passivation to reduce plasma damage
3个月前
已完结
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