Lv51
960 积分 2025-07-01 加入
Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy
2天前
求助中
The impact of defect evolution on the electrical performance of AlGaN/GaN HEMT after 14-MeV neutron irradiation
2天前
已完结
Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
3天前
已完结
Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures
8天前
已完结
Evolution of Deep Traps in GaN‐Based RF High Electron Mobility Transistors under High Voltage OFF‐State Stress
9天前
已关闭
Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition
11天前
已完结
Drain current DLTS of AlGaN/GaN HEMTs
11天前
已完结
Development of current-based microscopic defect analysis methods and associated optical filling techniques for the investigation on highly irradiated high resistivity silicon detectors
11天前
已完结
Fluid responsiveness in mechanically ventilated patients: a review of indices used in intensive care
12天前
已完结
Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate
17天前
已完结
皖公网安备34019202002308
