Lv5
1310 积分 2025-07-01 加入
Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation
8天前
已完结
Deep-level-transient-spectroscopy study on electron traps near GaN surface generated by sputter deposition of SiO2
14天前
已完结
Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy
15天前
已完结
Effects of pre-deposition annealing prior to gate insulator deposition in planar AlGaN/GaN MIS-HEMT with a thin AlGaN barrier layer
22天前
已关闭
ALD-derived high-k ZrAlOx dielectrics for boosted performance of CNTs/ZTO CMOS inverter
22天前
已完结
Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy
22天前
已完结
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
23天前
已完结
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
25天前
已完结
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
25天前
已完结
Performance enhancement of nitrogen-polar GaN-based light-emitting diodes prepared by metalorganic chemical vapor deposition
27天前
已完结
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