| 标题 |
Influence of dislocation clusters on homoepitaxial layers grown by halide vapor phase epitaxy (001) β-Ga2O3 investigated by synchrotron x-ray topography and scanning transmission electron microscopy |
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| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Sayleap Sdoeung; Kohei Sasaki; Chia-Hung Lin; Mohan Rajesh; Tomoka Nishikawa; et al 出版日期:2026-05-04 |
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(2025-6-4)