Lv11
20 积分 2024-07-23 加入
Investigation on the mechanism of instability for step morphology during 3C-SiC (111) vicinal surface epitaxial growth
3小时前
已完结
Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates
4小时前
已完结
Rapid Oxidation of SiC Using Microwave-Discharged O2 Plasma at Low Temperatures (< 300°C)
14天前
已完结
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy
17天前
已完结
Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC∕SiO2 interfaces in oxidized porous SiC
17天前
已完结
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy
1个月前
已完结
On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes
1个月前
已完结
Investigate on material removal of 3C-SiC crystals in nano-polishing via molecular dynamics
1个月前
已完结
Thermal conductivity reduction in highly-doped cubic SiC by phonon-defect and phonon-electron scattering
1个月前
已完结
Study on the transformation of diamond into graphene through high-temperature annealing
1个月前
已完结
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