Lv4
600 积分 2024-07-23 加入
Modeling and Suppressing Interfacial Instability in Growth of SiC from High-Temperature Solutions
11小时前
已完结
Analysis of two-dimensional electron gas mobility in 3C-SiC/4H-SiC heterojunction
11小时前
已完结
High-mobility 2D electron gas in carbon-face 3C-SiC/4H-SiC heterostructure with single-domain 3C-SiC layer
22天前
已完结
SiC-based high electron mobility transistor
22天前
已完结
Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes
25天前
已完结
Photoconductivity of semi-insulating SiC:< V, Al>
1个月前
已完结
Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review
1个月前
已关闭
An electronic energy model for multi-stacking faults in reducing carrier lifetime in 4H-SiC epitaxial layers
1个月前
已完结
Dislocations in 4H-SiC epilayers for power devices: Identification, formation, and regulation
2个月前
已完结
The influence of growth conditions on carrier lifetime in 4H–SiC epilayers
3个月前
已完结
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