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80 积分 2024-07-23 加入
Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography
7小时前
已完结
Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
7小时前
已完结
Effects of crystal rotation on the carbon transport in the top-seeded solution growth of SiC single crystal
14天前
已完结
Effects of solution height and crystal rotation on the solution flow behavior in the top-seeded solution growth of SiC single crystals
14天前
已完结
Ion implantation range distributions in silicon carbide
25天前
已完结
Chemical structure study of SiO2/4H-SiC (0001) interface transition region by angle-dependent x-ray photoelectron spectroscopy
28天前
已关闭
3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
30天前
已完结
Crystal Quality of 3C-SiC Influenced by the Diffusion Step in the Modified Four-Step Method
1个月前
已完结
Investigation on the mechanism of instability for step morphology during 3C-SiC (111) vicinal surface epitaxial growth
1个月前
已完结
Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates
1个月前
已完结
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