| 标题 |
Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy |
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| DOI | |
| 其它 |
期刊:Science China Physics, Mechanics & Astronomy 作者:CuiHong Kai; XiaoJuan Sun; YuPing Jia; ZhiMing Shi; Ke Jiang; et al 出版日期:2019-01-02 |
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(2025-6-4)