| 标题 |
5 kV NiO/β-Ga2O3 heterojunction diodes with dual-layer spatially modulated JTE and ±79% process tolerance |
| 网址 | |
| DOI | |
| 其它 |
期刊:Microelectronics Journal 作者:Fushuang Qin; F. Liao; Jinle You; Xiaoyang Yu; Shuanghong Song; et al 出版日期:2026-09-01 |
| 求助人 | |
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(2025-6-4)