| 标题 |
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Esmat Farzana; Elaheh Ahmadi; James S. Speck; Aaron R. Arehart; Steven A. Ringel 出版日期:2018-03-12 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)