| 标题 |
Surface prefunctionalization of SiO2 to modify the etch per cycle during plasma-assisted atomic layer etching |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 作者:Ryan J. Gasvoda; Yuri G. P. Verstappen; Scott Wang; Eric A. Hudson; Sumit Agarwal 出版日期:2019-08-29 |
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(2025-6-4)