| 标题 |
Intrinsic electron mobilities in CdSe, CdS, ZnO, and ZnS and their use in analysis of temperature-dependent Hall measurements |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Xiaocheng Yang; Chunchuan Xu; N. C. Giles 出版日期:2008-10-01 |
| 求助人 | |
| 下载 | 求助已完成,仅限求助人下载。 |
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(2025-6-4)