| 标题 |
Monolithic 3D Integration of Dual-Gated ALD Oxide-Channel Non-Volatile Capacitive Memory on 40nm Si CMOS for Digital Compute-in-Memory |
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| DOI | |
| 其它 |
期刊:2025 IEEE International Electron Devices Meeting (IEDM) 作者:Junmo Lee; Chengyang Zhang; Siheon Park; Hyeonwoo Park; Tae-Hyeon Kim; et al 出版日期:2026-01-31 |
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(2025-6-4)