| 标题 |
4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process |
| 网址 | |
| DOI | |
| 其它 |
期刊:Nanomaterials 作者:Xiao-Hong Cheng; Yongliang Li; Fei Zhao; Anlan Chen; Haoyan Liu; et al 出版日期:2022-03-01 |
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(2025-6-4)