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Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson Recovery |
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期刊:2025 IEEE International Reliability Physics Symposium (IRPS) 作者:Bernhard Ruch; Rajarshi Roy Chaudhuri; Boris Butej; Joao Gomes; Manuel Stabentheiner; et al 出版日期:2025-03-30 |
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(2025-6-4)