| 标题 |
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate |
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| DOI | |
| 其它 |
期刊:Microelectronics Reliability 作者:Simone Longato; D. Favero; A. Stockman; A. Nardo; P. Vanmeerbeek; et al 出版日期:2025-04-02 |
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(2025-6-4)