| 标题 |
Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate |
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| 其它 |
期刊:Applied Physics Letters 作者:Tomoyuki Kawaide; Yoshinobu Kometani; Sakura Tanaka; Takashi Egawa; Makoto Miyoshi 出版日期:2024-05-08 |
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(2025-6-4)