| 标题 |
Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures |
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| DOI | |
| 其它 |
期刊:IEEE Transactions on Power Electronics 作者:Jiaxing Wei; Zhaoxiang Wei; Hao Fu; Junhou Cao; Tuanzhuang Wu; et al 出版日期:2023-04-10 |
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(2025-6-4)